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Power Amplifier Design Case Study: 2.4 GHz 10W PA

Complete case study of designing a 2.4 GHz 10W power amplifier including transistor selection, matching networks, thermal design, and measurement results.

From initial specifications through final production validation, this guide demonstrates real-world RF PA design challenges and solutions for WiFi 6 applications.

Power Electronics Team18 min read

Project Overview and Specifications

This comprehensive case study documents the complete design process of a 2.4 GHz, 10W power amplifier for WiFi 6 applications. Our target application requires high efficiency (>40% PAE), excellent linearity for OFDM signals, and robust thermal performance in a compact form factor.

Design Specifications

RF Performance
  • • Frequency: 2.4-2.5 GHz
  • • Output Power: 10W (40 dBm)
  • • Gain: 28 ± 1 dB
  • • PAE: >40% @ P1dB
  • • P1dB: >39 dBm
System Requirements
  • • Supply Voltage: 28V
  • • EVM: <-25 dB (64-QAM)
  • • Operating Temp: -40°C to +85°C
  • • Size: 15 × 10 mm maximum
  • • Cost Target: <$8 in 10K volume

Transistor Selection and Analysis

Device selection is arguably the most critical decision in PA design, directly impacting performance, cost, and design complexity. For our 2.4 GHz, 10W application, we evaluated GaN HEMT, LDMOS, and GaAs pHEMT technologies.

Device Comparison Matrix

TechnologyPower DensityEfficiencyCost
GaN HEMT5-8 W/mm50-65%$$$$
LDMOS1-2 W/mm40-55%$$
GaAs pHEMT0.5-1 W/mm35-50%$$$

Selected: Qorvo TGF2023-SM GaN on SiC HEMT - 15W capability with excellent thermal performance (Rth = 8°C/W)

Large-Signal Device Modeling

Accurate device modeling is essential for successful PA design, particularly for efficiency optimization and linearity prediction. Load-pull simulations at the target frequency and power level revealed optimal load impedances.

Optimal Impedances (Current Generator Reference)

Load Impedance (ZL)
15 + j8 Ω
Peak PAE: 58%
Source Impedance (ZS)
5 - j3 Ω
Max gain, stability

Input Matching Network Design

The input matching network transforms the 50Ω system impedance to the optimal source impedance while providing DC bias insertion and stability.

Input Network Component Values

Primary Matching:

  • • L1: 3.9 nH (series)
  • • C1: 1.8 pF (shunt)
  • • L2: 2.2 nH (series)
  • • C2: 0.8 pF (shunt)

Stability & Bias:

  • • R_stab: 10 Ω (series)
  • • C_stab: 100 pF (series)
  • • L_bias: 100 nH (RF choke)
  • • C_bias: 1000 pF (bypass)
Simulated:S11 < -15 dB, K > 1.5, Gain = 12 dB

Output Matching Network Design

The output matching network is more challenging than the input due to higher power levels, harmonic content, and the need for harmonic suppression. Our design uses a multi-section approach combining fundamental matching with harmonic termination.

  • Output return loss better than -12 dB across the band
  • 2nd harmonic suppression exceeding -30 dBc
  • 3rd harmonic suppression exceeding -35 dBc

Bias Network and Thermal Design

Thermal design is critical for the 10W power level. Gate bias is set at -2.8V for Class AB operation, providing a compromise between efficiency and linearity.

Thermal Management

  • Multi-layer PCB with extensive thermal vias
  • Large ground plane as heat spreader
  • Predicted junction temperature rise: 65°C above ambient

PCB Layout and Implementation

High-frequency PCB layout requires careful attention to transmission line design, via placement, and thermal management.

PCB Design Specifications

Stackup Design
  • • Layer 1: RO4350B (0.1mm)
  • • Layer 2: FR-4 Ground (0.1mm)
  • • Layer 3: FR-4 Power (0.1mm)
  • • Layer 4: RO4350B (0.1mm)
  • • Total thickness: 0.8mm
Thermal Features
  • • 2oz copper on all layers
  • • 0.2mm thermal vias (48 total)
  • • Large ground plane heat spreader
  • • Thermal pad 5×5mm
  • • Rth(pcb): 15°C/W

Measurement Results and Validation

Comprehensive measurements validated the design performance against specifications. All measured results met or exceeded the design specifications.

Measured vs. Simulated Results

ParameterSpecSimulatedMeasured
Gain @ 2.45 GHz28 ± 1 dB28.5 dB28.2 dB ✓
PAE @ 10W>40%45%42% ✓
P1dB>39 dBm39.8 dBm39.5 dBm ✓
2nd Harmonic<-30 dBc-32 dBc-31 dBc ✓

Design Lessons Learned

Key Challenges & Solutions

Challenge: Thermal management

  • • Solution: Multi-layer thermal via array and large ground plane
  • • Impact: Reduced junction temperature by 15°C

Challenge: Component tolerance sensitivity

  • • Solution: Broader matching bandwidth and component screening
  • • Impact: Improved yield from 85% to 96%

Challenge: EMI/harmonic compliance

  • • Solution: Enhanced harmonic filtering and shielding
  • • Impact: Passed EMC testing with 10 dB margin

Key Design Insights

  • Device selection is critical - consider power density, efficiency, and cost
  • Load-pull analysis is essential for optimizing efficiency and output power
  • Thermal management becomes dominant at power levels above 5W
  • Component tolerances significantly impact yield - design for robustness
  • Harmonic suppression requires dedicated filtering networks

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